Nieuws-overig
  • Nieuwsbrief

20 07 2017 03

BMW i Ventures has made a strategic investment in GaN Systems, a fabless power transistor company at the forefront of semiconductor technology. Gallium Nitride (GaN) is a wide band gap (WBG) semiconductor material that allows for higher energy efficiency, smaller form factors and higher performance.

GaN devices offer a number of benefits compared to silicon-based devices, including high dielectric strength; high current density; high switching speeds; low on-resistance; and the ability to withstand higher operating temperature. Compared to silicon, gallium nitride has ten times higher electrical breakdown characteristics, three times the band gap, and exceptional carrier mobility.

GaN Systems focuses on GaN-based power transistors that can be used in consumer devices, data centers, industrial and automotive. GaN transistors enable next generation electric vehicles with higher power density, faster charging capabilities and longer ranges.

Read more

Tags: Vehicle

Overig nieuws

Publicaties 249x249 VACATURES 249x249
Leden 249x249  CURSUS AANBOD 249x249

AutomotiveNL - Twitter

S5 Box

Ja, stuur mij AutomotiveNL nieuwsbrieven